 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| parameter max. units v ds drain- source voltage -20 v i d @ t a = 25c continuous drain current, v gs @ -4.5v -2.9 i d @ t a = 70c continuous drain current, v gs @ -4.5v -2.3 a i dm pulsed drain current -11 p d @t a = 25c power dissipation 0.96 p d @t a = 70c power dissipation 0.62 linear derating factor 0.008 mw/c v gs gate-to-source voltage 12 v t j, t stg junction and storage temperature range -55 to + 150 c 04/20/10 www.irf.com 1 IRF5810PBF hexfet power mosfet parameter max. units r ja maximum junction-to-ambient 130 c/w thermal resistance v dss r ds(on) max (m i d -20v 90@v gs = -4.5v -2.9a 135@v gs = -2.5v -2.3a tsop-6 these p-channel hexfet power mosfets from international rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. this benefit provides the designer with an extremely efficient device for use in battery and load management applications. this dual tsop-6 package is ideal for applications where printed circuit board space is at a premium and where maximum functionality is required. with two die per package, the irf5810 can provide the functionality of two sot-23 packages in a smaller footprint. its unique thermal design and r ds(on) reduction enables an increase in current-handling capability. description ultra low on-resistance dual p-channel mosfet surface mount available in tape & reel low gate charge lead-free halogen-free pd - 95469b 2 www.irf.com parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -20 ??? ??? v v gs = 0v, i d = -250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.011 ??? v/c reference to 25c, i d = -1ma ??? 60 90 v gs = -4.5v, i d = -2.9 ??? 87 135 v gs = -2.5v, i d = -2.3a v gs(th) gate threshold voltage -0.45 ??? -1.2 v v ds = v gs , i d = -250a g fs forward transconductance 5.4 ??? ??? s v ds = -10v, i d = -2.9a ??? ??? -1.0 v ds = -16v, v gs = 0v ??? ??? -25 v ds = -16v, v gs = 0v, t j = 70c gate-to-source forward leakage ??? ??? -100 v gs = -12v gate-to-source reverse leakage ??? ??? 100 v gs = 12v q g total gate charge ??? 6.4 9.6 i d = -2.9a q gs gate-to-source charge ??? 1.2 1.8 nc v ds = -10v q gd gate-to-drain ("miller") charge ??? 1.7 2.6 v gs = -4.5v t d(on) turn-on delay time ??? 8.2 ??? v dd = -10v t r rise time ??? 14 ??? i d = -1.0a t d(off) turn-off delay time ??? 62 ??? r g = 6.0 ? t f fall time ??? 53 ??? v gs = -4.5v c iss input capacitance ??? 650 ??? v gs = 0v c oss output capacitance ??? 110 ??? pf v ds = -16v c rss reverse transfer capacitance ??? 86 ??? ? = 1khz source-drain ratings and characteristics 11 1.0 s d g repetitive rating; pulse width limited by max. junction temperature. pulse width 400s; duty cycle electrical characteristics @ t j = 25c (unless otherwise specified) m ? r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current surface mounted on 1 in square cu board parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) p-n junction diode. v sd diode forward voltage ??? ??? -1.2 v t j = 25c, i s = -1.0a, v gs = 0v t rr reverse recovery time ??? 110 170 ns t j = 25c, i f = -1.0a q rr reverse recovery charge ??? 130 200 nc di/dt = -100a/s www.irf.com 3 fig 3. typical transfer characteristics fig 2. typical output characteristics fig 1. typical output characteristics -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -4.5v -2.9a fig 4. normalized on-resistance vs. temperature 1.0 1.5 2.0 2.5 3.0 -v gs , gate-to-source voltage (v) 0.1 1.0 10.0 100.0 - i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 150c v ds = -15v 20s pulse width 0.01 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs -10v -7.0v -4.5v -3.0v -2.5v -1.8v -1.5v -1.2v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -1.2v 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs -10v -7.0v -4.5v -3.0v -2.5v -1.8v -1.5v -1.2v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -1.2v 4 www.irf.com fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 8. maximum safe operating area 1 10 100 0 200 400 600 800 1000 -v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 2 4 6 8 10 12 0 2 4 6 8 10 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs i = d -2.9a v = -10v ds v = -16v ds fig 7. typical source-drain diode forward voltage 0 1 10 100 -v ds , drain-tosource voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 1. 4 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j www.irf.com 5 fig 11. typical effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , case temperature ( c) -i , drain current (a) c d 0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 1 0.1 % + - v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10a. switching time test circuit fig 10b. switching time waveforms 6 www.irf.com fig 13. typical on-resistance vs. drain current fig 12. typical on-resistance vs. gate voltage 2.0 4.0 6.0 8.0 10.0 -v gs, gate -to -source voltage (v) 0.04 0.05 0.06 0.07 0.08 0.09 0.10 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = -2.9a fig 14b. gate charge test circuit fig 14a. basic gate charge waveform q g q gs q gd v g charge d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 0246810 -i d , drain current (a) 0.00 0.05 0.10 0.15 0.20 0.25 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) v gs = -4.5v v gs = -2.5v www.irf.com 7 fig 15. threshold voltage vs. temperature -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 - v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = -250a typical power vs. time 0.0001 0.0010 0.0100 0.1000 1.0000 10.0000 100.0000 time (sec) 0 10 20 30 40 50 60 p o w e r ( w ) 8 www.irf.com ! " " # " " " " $ " % & ' ( ! ) ) " " *+ ) " ,$ ) " *+ - . / ' 0 1 % 2 ' & 3 ' 4 % 5 6 4 ' ' 6 0 ( ( 3 % 4 / 3 ' 5 ' . / 7 . 8 0 & ' ( ' 0 7 5 ' ' - . / ' 1 ' - % 4 & 3 ' 9 0 5 & / : ; 1 ' 5 0 ( ( 3 % 4 / 3 ' 5 ' . / 7 . 8 0 & ' ( : 4 . 5 ' " " " " http://www.irf.com/package/ www.irf.com 9 data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualifications standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 04/2010 |
Price & Availability of IRF5810PBF
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |